Title:
THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2010/119952
Kind Code:
A1
Abstract:
(1) Disclosed is a thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said thin film transistor being characterized in that the channel layer is formed of an indium oxide film that is doped with tungsten and zinc and/or tin.
(2) Disclosed is a bipolar thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said bipolar thin film transistor being characterized in that the channel layer is a laminate of an organic material film and a metal oxide film that contains indium doped with at least one of tungsten, tin or titanium and has an electrical resistivity that is controlled in advance.
(3) Disclosed is a method for manufacturing a thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said method for manufacturing a thin film transistor being characterized in that at least the channel layer or a part of the channel layer is formed by forming a metal oxide film by a sputtering process using an In-containing target without heating the substrate, and a heat treatment is carried out after forming the above-described elements on the substrate.
Inventors:
SHIINO OSAMU (JP)
SUGIE KAORU (JP)
IWABUCHI YOSHINORI (JP)
SUGIE KAORU (JP)
IWABUCHI YOSHINORI (JP)
Application Number:
PCT/JP2010/056850
Publication Date:
October 21, 2010
Filing Date:
April 16, 2010
Export Citation:
Assignee:
BRIDGESTONE CORP (JP)
SHIINO OSAMU (JP)
SUGIE KAORU (JP)
IWABUCHI YOSHINORI (JP)
SHIINO OSAMU (JP)
SUGIE KAORU (JP)
IWABUCHI YOSHINORI (JP)
International Classes:
H01L29/786; C23C14/08; C23C14/58; H01L21/336; H01L21/363
Domestic Patent References:
| WO2008099863A1 | 2008-08-21 |
Foreign References:
| JP2008192721A | 2008-08-21 | |||
| JP2006173580A | 2006-06-29 | |||
| JP2008192721A | 2008-08-21 |
Other References:
NATURE, vol. 432, 2004, pages 488
APPLIED PHYSICS LETTERS, vol. 90, 2007, pages 262104
See also references of EP 2421048A4
APPLIED PHYSICS LETTERS, vol. 90, 2007, pages 262104
See also references of EP 2421048A4
Attorney, Agent or Firm:
KOJIMA TAKASHI (JP)
Takashi Kojima (JP)
Takashi Kojima (JP)
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