THIN FILM TRANSISTOR AND METHOD THEREOF, ARRAY SUBSTRATE, AND DISPLAY APPARATUS

Title:

THIN FILM TRANSISTOR AND METHOD THEREOF, ARRAY SUBSTRATE, AND DISPLAY APPARATUS

Document Type and Number:

WIPO Patent Application WO/2017/075993

Kind Code:

A1

Abstract:

A method for forming a thin film transistor (TFT), a related TFT, an array substrate, and a display apparatus are provided. The method comprises: forming a pattern of an active layer (02) on a base substrate (01) and insulated from a gate electrode (06); forming a first initial ohmic contacting layer (03) and a second initial ohmic contacting layer (04) on the active layer (02); forming a source electrode (08) on the first initial ohmic contacting layer (03), and a drain electrode (09) on the second initial ohmic contacting layer (04); and performing a heating treatment to the base substrate (01) having the source electrode (08) and the drain electrode (09) thereon, such that metal atoms in the source electrode (08) diffuse to the first initial ohmic contacting layer (03) to form a first ohmic contacting layer (10), and metal atoms in the drain electrode (09) diffuse to the second initial ohmic contacting layer (04) to form a second ohmic contacting layer (11).

Inventors:

HSIN LUNGPAO (CN)

Application Number:

PCT/CN2016/085100

Publication Date:

May 11, 2017

Filing Date:

June 07, 2016

Export Citation:

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Assignee:

BOE TECHNOLOGY GROUP CO LTD (CN)

International Classes:

H01L29/786

Foreign References:

CN105261636A	2016-01-20
CN205069643U	2016-03-02
CN103646966A	2014-03-19
CN101064345A	2007-10-31
CN103208526A	2013-07-17
US20140326994A1	2014-11-06
CN103094352A	2013-05-08
US20140001469A1	2014-01-02
CN101501820A	2009-08-05

Other References: