Title:
THIN FILM TRANSISTOR AND PREPARATION METHOD THEREFOR, SHIFT REGISTER AND GATE DRIVING CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2021/258933
Kind Code:
A1
Abstract:
A thin film transistor, comprising: at least one active layer pattern (2), wherein the active layer pattern (2) comprises a first conductive pattern (201), a second conductive pattern (202) and a semiconductor pattern (203) located between the first conductive pattern (201) and the second conductive pattern (202); a gate electrode (1) which is located on one side of the active layer pattern (2) and is insulated from the active layer pattern (2); and a first pole (3) and a second pole (4) which are located on the gate electrode (1) back to the active layer pattern (2) and electrically connected to the first conductive pattern (201) and the second conductive pattern (202) respectively. The semiconductor pattern (203) in the at least one active layer pattern (2) is configured with a corresponding conductive shielding pattern (5), the conductive shielding pattern (5) is located on the side, back to the gate electrode (1), of the semiconductor pattern (203) and is electrically connected to the first pole (3), and a buffer layer (6) is arranged between the conductive shielding pattern (5) and the semiconductor pattern (203). The orthographic projection of the conductive shielding pattern (5) on the plane where the corresponding semiconductor pattern (203) is located at least partially covers the corresponding semiconductor pattern (203).
Inventors:
WANG QINGHE (CN)
SU TONGSHANG (CN)
WANG JUN (CN)
HUANG YONGCHAO (CN)
WANG HAITAO (CN)
LIU NING (CN)
CHENG JUN (CN)
HU YINGBIN (CN)
SU TONGSHANG (CN)
WANG JUN (CN)
HUANG YONGCHAO (CN)
WANG HAITAO (CN)
LIU NING (CN)
CHENG JUN (CN)
HU YINGBIN (CN)
Application Number:
PCT/CN2021/094847
Publication Date:
December 30, 2021
Filing Date:
May 20, 2021
Export Citation:
Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO LTD (CN)
HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO LTD (CN)
International Classes:
H01L21/336; H01L29/786; H01L23/552; H01L27/32
Foreign References:
| CN111682075A | 2020-09-18 | |||
| CN106486526A | 2017-03-08 | |||
| US20090185089A1 | 2009-07-23 |
Attorney, Agent or Firm:
TEE&HOWE INTELLECTUAL PROPERTY ATTORNEYS (CN)
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