Title:
THIN-FILM TRANSISTOR AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/116336
Kind Code:
A1
Abstract:
A thin-film transistor and a preparation method therefor .The thin-film transistor comprises a composite electrode (20a/20b/20c), the composite electrode (20a/20b/20c) comprising a barrier layer (21) and an electrode layer (22), wherein the barrier layer (21) has a tail (211) relative to the electrode layer (22), an orthographic projection of the tail (211) on the composite electrode (20a/20b/20c) protrudes from an orthographic projection of the electrode layer (22) on the composite electrode (20a/20b/20c), and the length of the tail (211) ranges from 0.3 μm to 0.5 μm. By means of the thin-film transistor and the preparation method therefor, light leakage can be alleviated, and the product contrast can be improved.
Inventors:
HU XIAOBO (CN)
Application Number:
PCT/CN2020/141117
Publication Date:
June 09, 2022
Filing Date:
December 29, 2020
Export Citation:
Assignee:
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD (CN)
International Classes:
H01L29/417; H01L21/336; H01L29/423; H01L29/786
Foreign References:
| CN107154403A | 2017-09-12 | |||
| CN110867458A | 2020-03-06 | |||
| CN105702744A | 2016-06-22 | |||
| CN1828886A | 2006-09-06 |
Attorney, Agent or Firm:
PURPLEVINE INTELLECTUAL PROPERTY (SHENZHEN) CO., LTD. (CN)
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