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Title:
THIN FILM TRANSISTOR AND PRODUCTION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2020/116499
Kind Code:
A1
Abstract:
A thin film transistor having arranged, in order, upon a substrate: a gate electrode; a gate insulating layer; an oxide semiconductor layer; and a source electrode and a drain electrode. The thin film transistor is characterized by: the oxide semiconductor layer comprising, in order from the substrate side, a first semiconductor layer and a second semiconductor layer that comprise an oxide semiconductor film that has the same constituent element in both; and the crystallinity of the oxide semiconductor film constituting the second semiconductor layer being higher than the crystallinity of the oxide semiconductor film constituting the first semiconductor layer.

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Inventors:
MATSUO DAISUKE (JP)
ANDO YASUNORI (JP)
Application Number:
PCT/JP2019/047389
Publication Date:
June 11, 2020
Filing Date:
December 04, 2019
Export Citation:
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Assignee:
NISSIN ELECTRIC CO LTD (JP)
International Classes:
H01L29/786; H01L21/336
Domestic Patent References:
WO2018061969A12018-04-05
WO2009157535A12009-12-30
Foreign References:
JP2018190949A2018-11-29
JP2016074580A2016-05-12
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