Title:
THIN FILM TRANSISTOR SUBSTRATE, MANUFACTURING METHOD THEREFOR, AND DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2011/104791
Kind Code:
A1
Abstract:
An active matrix substrate (20a) is provided with a gate electrode (11aa), a gate insulating layer (12) which is provided so as to cover the gate electrode (11aa), an oxide semiconductor layer (13a) which is provided on the gate insulating layer (12) and has a channel region (C), a source electrode (16aa) and a drain electrode (16b) which are provided on the oxide semiconductor layer (13a), an interlayer insulating film (17) which covers the oxide semiconductor layer (13a), the source electrode (16aa) and the drain electrode (16b), and a planarizing film (18) which is provided on the interlayer insulating film (17). An opening (Ca) which reaches the interlayer insulating film (17) is formed in a portion located above the channel region (C) of the planarizing film (18).
Inventors:
MIYAMOTO TADAYOSHI
TOMIYASU KAZUHIDE
TOMIYASU KAZUHIDE
Application Number:
PCT/JP2010/006369
Publication Date:
September 01, 2011
Filing Date:
October 28, 2010
Export Citation:
Assignee:
SHARP KK (JP)
MIYAMOTO TADAYOSHI
TOMIYASU KAZUHIDE
MIYAMOTO TADAYOSHI
TOMIYASU KAZUHIDE
International Classes:
G02F1/1368; H01L29/786
Foreign References:
| JP2001250932A | 2001-09-14 | |||
| JP2009094465A | 2009-04-30 | |||
| JPH10333178A | 1998-12-18 | |||
| JPH11186561A | 1999-07-09 |
Attorney, Agent or Firm:
MAEDA, Hiroshi et al. (JP)
Hiroshi Maeda (JP)
Hiroshi Maeda (JP)
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Claims: