Title:
THIN-FILM TRANSISTOR SUBSTRATE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2020/252876
Kind Code:
A1
Abstract:
The present invention provides a thin-film transistor substrate and a preparation method therefor. The thin-film transistor substrate comprises a substrate, an active layer, a gate insulation layer, a gate layer, an interlayer dielectric layer, a source drain layer, an organic layer and a pixel electrode layer which are arranged in sequence, wherein the active layer is made of cuprous iodide.
Inventors:
ZHAO WENQUN (CN)
Application Number:
PCT/CN2019/100865
Publication Date:
December 24, 2020
Filing Date:
August 15, 2019
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECT (CN)
International Classes:
H01L29/786; H01L27/12; H01L29/24
Foreign References:
| CN108376712A | 2018-08-07 |
Attorney, Agent or Firm:
ESSEN PATENT & TRADEMARK AGENCY (CN)
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