Title:
THIN-FILM TRANSISTOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2011/126076
Kind Code:
A1
Abstract:
Disclosed is a thin-film transistor substrate with excellent switching characteristics. The thin-film transistor substrate is provided with a substrate and a thin-film transistor that is formed upon the abovementioned substrate and that has an oxide semiconductor layer comprising an oxide semiconductor and semiconductor layer-contacting insulation layers formed in a manner so as to be in contact with the abovementioned oxide semiconductor layer; and the thin-film transistor substrate is characterized in that at least one of the semiconductor layer-contacting insulation layers included in the abovementioned thin-film transistor is a photosensitive polyimide insulation layer formed using a photosensitive polyimide resin composition.
Inventors:
FUKUDA SHUNJI (JP)
SAKAYORI KATSUYA (JP)
ARIHARA KEITA (JP)
SAKAYORI KATSUYA (JP)
ARIHARA KEITA (JP)
Application Number:
PCT/JP2011/058822
Publication Date:
October 13, 2011
Filing Date:
April 07, 2011
Export Citation:
Assignee:
DAINIPPON PRINTING CO LTD (JP)
FUKUDA SHUNJI (JP)
SAKAYORI KATSUYA (JP)
ARIHARA KEITA (JP)
FUKUDA SHUNJI (JP)
SAKAYORI KATSUYA (JP)
ARIHARA KEITA (JP)
International Classes:
H01L29/786; C08G73/10; H01L21/312; H01L21/336
Domestic Patent References:
| WO2009123122A1 | 2009-10-08 | |||
| WO2008136270A1 | 2008-11-13 |
Foreign References:
| JPS6424231A | 1989-01-26 | |||
| JP2010016126A | 2010-01-21 | |||
| JP2008251575A | 2008-10-16 | |||
| JP2009021322A | 2009-01-29 | |||
| JP2009088377A | 2009-04-23 | |||
| JP2005115249A | 2005-04-28 | |||
| JP2009080452A | 2009-04-16 |
Attorney, Agent or Firm:
YAMASHITA, Akihiko et al. (JP)
Akihiko Yamashita (JP)
Akihiko Yamashita (JP)
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Claims: