Title:
THIN FILM TRANSISTOR OF VERTICAL STRUCTURE AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/036762
Kind Code:
A1
Abstract:
The present application provides a thin film transistor of a vertical structure and an electronic device. According to the thin film transistor of the vertical structure, a second doped portion is arranged in a via hole of an insulating layer, is connected to a channel portion by means of the via hole, and partially makes contact with the channel portion, such that the area of contact between the second doped portion and the channel portion can be reduced, thereby reducing ions diffused to a channel region, improving the device stability of the thin film transistor, reducing the projection area of the thin film transistor, and increasing an aperture ratio of a display panel.
Inventors:
LI ZHIFU (CN)
LIU GUANGHUI (CN)
AI FEI (CN)
SONG DEWEI (CN)
LUO CHENGZHI (CN)
LIU GUANGHUI (CN)
AI FEI (CN)
SONG DEWEI (CN)
LUO CHENGZHI (CN)
Application Number:
PCT/CN2022/129808
Publication Date:
February 22, 2024
Filing Date:
November 04, 2022
Export Citation:
Assignee:
WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD (CN)
International Classes:
H01L29/786; H01L29/36; H01L21/336; H01L29/167
Foreign References:
| CN109473358A | 2019-03-15 | |||
| US20200098875A1 | 2020-03-26 | |||
| CN103311310A | 2013-09-18 | |||
| CN111613654A | 2020-09-01 |
Attorney, Agent or Firm:
PURPLEVINE INTELLECTUAL PROPERTY (SHENZHEN) CO., LTD. (CN)
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