Title:
THIN FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2014/061638
Kind Code:
A1
Abstract:
Provided is a thin film transistor wherein the shape of a protrusion formed on the interface between an oxide semiconductor layer and a protection film is suitably controlled, and stable characteristics are achieved. This thin film transistor is characterized in that: the thin film transistor has an oxide semiconductor layer formed of an oxide containing at least In, Zn and Sn as metal elements, and a protection film directly in contact with the oxide semiconductor layer; and the maximum height of a protrusion formed on the oxide semiconductor layer surface directly in contact with the protection film is less than 5 nm.
Inventors:
TAO HIROAKI
MAEDA TAKEAKI
MIKI AYA
KUGIMIYA TOSHIHIRO
MAEDA TAKEAKI
MIKI AYA
KUGIMIYA TOSHIHIRO
Application Number:
PCT/JP2013/077913
Publication Date:
April 24, 2014
Filing Date:
October 15, 2013
Export Citation:
Assignee:
KOBE STEEL LTD (JP)
International Classes:
H01L29/786; H01L21/336
Domestic Patent References:
| WO2011027467A1 | 2011-03-10 |
Foreign References:
| JP2012038891A | 2012-02-23 | |||
| JP2009141342A | 2009-06-25 | |||
| JP2011146724A | 2011-07-28 | |||
| JP2010186860A | 2010-08-26 | |||
| JP2012186383A | 2012-09-27 |
Attorney, Agent or Firm:
UEKI, Kyuichi et al. (JP)
Hisakazu Ueki (JP)
Hisakazu Ueki (JP)
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