Title:
THIN FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2017/150275
Kind Code:
A1
Abstract:
A TFT (thin film transistor) 11 comprises at least the following: a gate electrode 11a; a channel part 11d formed from an oxide semiconductor film 17; a source electrode 11b connected to one end of the channel part 11d; and a drain electrode 11c connected to the other end of the channel part 11d. The oxide semiconductor film 17 is an oxide semiconductor comprising at least gallium and indium, and has an atomic ratio Ga/(Ga + In) within a range of 1/4.2 to 1/3.3.
Inventors:
KANZAKI YOHSUKE
SAITOH TAKAO
KANEKO SEIJI
SAITOH TAKAO
KANEKO SEIJI
Application Number:
PCT/JP2017/006373
Publication Date:
September 08, 2017
Filing Date:
February 21, 2017
Export Citation:
Assignee:
SHARP KK (JP)
International Classes:
H01L29/786; C23C14/08
Domestic Patent References:
| WO2013168774A1 | 2013-11-14 | |||
| WO2015008805A1 | 2015-01-22 |
Attorney, Agent or Firm:
AKATSUKI UNION PATENT FIRM (JP)
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