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Patent Searching and Data


Title:
THREE-DIMENSIONAL FERROELECTRIC MEMORY AND METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/237730
Kind Code:
A1
Abstract:
Provided is a method for manufacturing a three-dimensional ferroelectric memory. The method can ensure the good endurance of a three-dimensional ferroelectric memory and can also reduce etching difficulty during the manufacturing of the three-dimensional ferroelectric memory. The method comprises: forming a stacked layer on a substrate, wherein the stacked layer comprises isolation layers and sacrificial layers, which are stacked and alternately arranged; arranging a plurality of columns of first voltage lines in the stacked layer, and providing an isolation groove between any two adjacent columns of first voltage lines from among the plurality of columns of first voltage lines; and etching the sacrificial layers in the stacked layer, and forming metal layers, wherein the metal layers and the isolation layers are stacked and alternately arranged, so that a storage layer is obtained. Each metal layer comprises a ferroelectric layer and a plurality of second voltage lines, wherein the ferroelectric layer surrounds portions of the plurality of second voltage lines and portions of the plurality of columns of first voltage lines, which portions are positioned in the metal layers, so that an MFM structure is formed in the metal layer, and the endurance of a three-dimensional ferroelectric memory is ensured. Furthermore, the sacrificial layers are made of a material which easily corrodes, and thus, the etching difficulty during manufacturing can be reduced.

Inventors:
ZHANG YAN (CN)
YANG XICHAO (CN)
WEI XIA (CN)
QIN JIANYING (CN)
Application Number:
PCT/CN2020/093504
Publication Date:
December 02, 2021
Filing Date:
May 29, 2020
Export Citation:
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Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L27/10; G11C11/22
Foreign References:
US9941299B12018-04-10
CN109786390A2019-05-21
CN108550575A2018-09-18
CN110190062A2019-08-30
CN110071117A2019-07-30
Attorney, Agent or Firm:
BEIJING ZBSD PATENT&TRADEMARK AGENT LTD. (CN)
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