Title:
THREE-DIMENSIONAL FLASH MEMORY HAVING IMPROVED STACK CONNECTION PART AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2022/203158
Kind Code:
A1
Abstract:
Disclosed are a three-dimensional flash memory having an improved stack connection part and a method for manufacturing same. A three-dimensional flash memory according to an embodiment may comprise: multiple stack structures, each of which comprises multiple word lines alternately stacked in a vertical direction while extending in the horizontal direction, and at least one cell string extending through the multiple word lines in the vertical direction, the at least one cell string comprising a channel layer extending in the vertical direction and a charge storage layer formed to surround the channel layer; and at least one buffer layer that is disposed between the multiple stack structures stacked in the vertical direction and connects the channel layers of the multiple stack structures to each other.
Inventors:
SONG YUN HEUB (KR)
Application Number:
PCT/KR2021/017623
Publication Date:
September 29, 2022
Filing Date:
November 26, 2021
Export Citation:
Assignee:
IUCF HYU (KR)
International Classes:
H01L27/11568; H01L25/065; H01L27/11582; H01L29/66; H01L29/792
Domestic Patent References:
| WO2019181606A1 | 2019-09-26 |
Foreign References:
| KR20190119155A | 2019-10-21 | |||
| US20200091166A1 | 2020-03-19 | |||
| KR20190092808A | 2019-08-08 | |||
| US20200066739A1 | 2020-02-27 |
Attorney, Agent or Firm:
KIM, Jeong Hoon (KR)
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