THREE-DIMENSIONAL FLASH MEMORY INCLUDING FLOATING DEVICES, AND MANUFACTURING METHOD THEREFOR

Title:

THREE-DIMENSIONAL FLASH MEMORY INCLUDING FLOATING DEVICES, AND MANUFACTURING METHOD THEREFOR

Document Type and Number:

WIPO Patent Application WO/2022/177109

Kind Code:

A1

Abstract:

A three-dimensional flash memory including floating devices and a manufacturing method therefor are disclosed. A method for manufacturing a three-dimensional flash memory according to an embodiment may comprise the steps of: preparing a semiconductor structure including a plurality of word lines and a plurality of interlayer insulating layers, which are alternately stacked in a vertical direction while extending in a horizontal direction, respectively, and at least one memory cell string formed extending through the plurality of word lines and the plurality of interlayer insulating layers in the vertical direction, wherein the at least one memory cell string constitutes a plurality of memory cells corresponding to the plurality of word lines, while including a channel layer formed extending in the vertical direction, a charge storage layer formed to surround the channel layer, and a floating device layer formed extending to surround the charge storage layer; removing the plurality of interlayer insulating layers from the semiconductor structure; and removing regions of the floating device layer corresponding to the plurality of interlayer insulating layers, in order to form a plurality of floating devices isolated from each other.

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Inventors:

SONG YUN HEUB (KR)

Application Number:

PCT/KR2021/017624

Publication Date:

August 25, 2022

Filing Date:

November 26, 2021

Export Citation:

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Assignee:

IUCF HYU (KR)

International Classes:

H01L27/11582; H01L27/11568; H01L27/1159; H01L27/11597; H01L29/66

Foreign References:

US20170069647A1	2017-03-09
KR20160056243A	2016-05-19
US20160163725A1	2016-06-09
KR20130123165A	2013-11-12
US20150008505A1	2015-01-08

Attorney, Agent or Firm:

KIM, Jeong Hoon (KR)

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