Title:
THREE-DIMENSIONAL MEMORY DEVICES
Document Type and Number:
WIPO Patent Application WO/2021/237488
Kind Code:
A1
Abstract:
3D memory devices and methods for forming the same are disclosed. A 3D memory device includes a substrate, a peripheral circuit on the substrate, a memory stack including interleaved conductive layers and dielectric layers above the peripheral circuit, an N-type doped semiconductor layer above the memory stack, a plurality of channel structures each extending vertically through the memory stack into the N-type doped semiconductor layer, and a source contact above the memory stack and in contact with the N-type doped semiconductor layer. An upper end of each of the plurality of channel structures is flush with or below a top surface of the N-type doped semiconductor layer.
Inventors:
ZHANG KUN (CN)
ZHOU WENXI (CN)
XIA ZHILIANG (CN)
HUO ZONGLIANG (CN)
ZHOU WENXI (CN)
XIA ZHILIANG (CN)
HUO ZONGLIANG (CN)
Application Number:
PCT/CN2020/092499
Publication Date:
December 02, 2021
Filing Date:
May 27, 2020
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L27/1157
Foreign References:
| CN111566815A | 2020-08-21 | |||
| CN110896669A | 2020-03-20 | |||
| CN109686739A | 2019-04-26 | |||
| US20040113171A1 | 2004-06-17 | |||
| CN109742081A | 2019-05-10 |
Other References:
See also references of EP 3942611A4
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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