Title:
THREE-DIMENSIONAL NAND MEMORY AND FABRICATION METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2023/024012
Kind Code:
A1
Abstract:
A method for forming a three-dimensional (3D) memory device is disclosed. The method includes forming an alternating dielectric stack on a substrate, wherein the alternating dielectric stack includes a plurality of dielectric layer pairs, each dielectric layer pair comprising a first dielectric layer and a second dielectric layer different from the first dielectric layer. The method also includes forming a staircase structure in the alternating dielectric stack and disposing an insulating layer on the staircase structure and the alternating dielectric stack. The method further includes forming an embedded hard mask on the insulating layer, wherein the embedded hard mask includes two or more sets of patterns configured to form two or more sets of vertical structures that are fabricated sequentially. The two or more sets of patterns are embedded in the 3D memory device.
Inventors:
ZHANG KUN (CN)
ZHOU WENXI (CN)
ZHOU WENXI (CN)
Application Number:
PCT/CN2021/114720
Publication Date:
March 02, 2023
Filing Date:
August 26, 2021
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L27/1157
Foreign References:
| CN111448648A | 2020-07-24 | |||
| US20210225866A1 | 2021-07-22 | |||
| CN109155319A | 2019-01-04 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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