THREE-DIMENSIONAL PACKAGING STRUCTURE OF MEMS INFRARED DETECTOR AND MANUFACTURING METHOD THEREFOR

WIPO Patent Application WO/2021/046992

A1

A three-dimensional packaging technology of an MEMS infrared detector. Two vertical conductive region glass reflow grooves (7) and a vertical lead (6) are provided on a silicon wafer (1), and embedded borosilicate glass is used as an electrically insulating layer of the lead (6) and a substrate (1). A sub-wavelength structure array (4) is arranged on the top of a packaging cover. According to the three-dimensional packaging structure in the present invention, the low-resistivity silicon vertical lead (6) prepared on the basis of a glass reflow process realizes inner and outer electrical interconnection, the borosilicate glass and the low-resistivity silicon have a matching thermal expansion coefficient therebetween, and thus the thermal stress is relatively low. The sub-wavelength structure array (4) on the top of the packaging cover is used for enhancing infrared transmission performance in a long-wavelength infrared region. A packaging chamber (5) is prepared below the sub-wavelength structure array (4) to accommodate the infrared detector. In addition, a method for manufacturing the packaging structure is further provided.

SONG CHENGUANG (CN)
ZHAO JICONG (CN)
SUN HAIYAN (CN)
SUN LING (CN)

PCT/CN2019/115253

March 18, 2021

November 04, 2019

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UNIV NANTONG (CN)

H01L31/0248; G02B5/00

CN109399552A	2019-03-01
CN109581552A	2019-04-05
CN103943714A	2014-07-23
CN202066596U	2011-12-07
CN103325862A	2013-09-25

NANTONG YIFAN INTELLECTUAL PROPERTY AGENCY (GENERAL PARTNERSHIP) (CN)

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