Title:
TRANSFER METHOD FOR TRANSFERRING COMPOUND SEMICONDUCTOR MONOCRYSTAL THIN FILM LAYER AND METHOD FOR PREPARING MONOCRYSTAL GAAS-OI COMPOSITE WAFER
Document Type and Number:
WIPO Patent Application WO/2021/017038
Kind Code:
A1
Abstract:
Disclosed are a method for transferring a compound semiconductor monocrystal thin film layer and a method for preparing a monocrystal GaAs-OI composite wafer, the method comprising: preparing a graphite transition layer on a first substrate; growing a compound semiconductor monocrystal thin film layer on the graphite transition layer; preparing a first dielectric layer on the compound semiconductor monocrystal thin film layer; preparing a second dielectric layer on a second substrate; combining the first substrate and the second substrate by means of bonding the first dielectric layer and the second dielectric layer; and applying lateral external pressure to laterally split the compound semiconductor monocrystal thin film layer from the first substrate at the graphite transition layer, and transferring the compound semiconductor monocrystal thin film layer to the second substrate. In the present invention, the epitaxially grown high-quality compound semiconductor monocrystal thin film layer is transferred to a Si-based substrate by means of dielectric layer bonding, thereby achieving high-quality, large-area, and low-cost preparation of a compound semiconductor monocrystal thin film layer on an SOI substrate.
Inventors:
WANG ZHIYONG (CN)
DAI JINGJING (CN)
LAN TIAN (CN)
DAI JINGJING (CN)
LAN TIAN (CN)
Application Number:
PCT/CN2019/100755
Publication Date:
February 04, 2021
Filing Date:
August 15, 2019
Export Citation:
Assignee:
UNIV BEIJING TECHNOLOGY (CN)
International Classes:
H01L21/762; H01L21/78
Foreign References:
| CN106611740A | 2017-05-03 | |||
| CN103021946A | 2013-04-03 | |||
| CN103021812A | 2013-04-03 | |||
| CN110050335A | 2019-07-23 | |||
| CN1385906A | 2002-12-18 | |||
| US20060284167A1 | 2006-12-21 |
Attorney, Agent or Firm:
BEIJING HUI & XIN IP LAW OFFICE (CN)
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