Title:
TRANSIENT VOLTAGE ABSORPTION ELEMENT
Document Type and Number:
WIPO Patent Application WO/2023/058553
Kind Code:
A1
Abstract:
A transient voltage absorption element (11) comprises: a semiconductor substrate (Sub); an epitaxial layer (Epi) formed on a surface of the semiconductor substrate (Sub); a p+ region and an n+ region formed in the epitaxial layer (Epi); an embedded layer (BL) formed in the semiconductor substrate (Sub); and a trench (TR). The epitaxial layer (Epi), the p+ region, and the n+ region constitute, and are included in, each of a plurality of diodes. The trench TR extends from the surface of the epitaxial layer (Epi) to the embedded layer (BL) and separates the diodes. The embedded layer (BL) has a higher impurity concentration than the semiconductor substrate (Sub), and is separated between adjacent diodes.
Inventors:
OHARA TATSUYA (JP)
Application Number:
PCT/JP2022/036478
Publication Date:
April 13, 2023
Filing Date:
September 29, 2022
Export Citation:
Assignee:
MURATA MANUFACTURING CO (JP)
International Classes:
H01L27/04
Domestic Patent References:
| WO2019142394A1 | 2019-07-25 | |||
| WO2014181565A1 | 2014-11-13 |
Foreign References:
| JP2015126149A | 2015-07-06 | |||
| JP2012182381A | 2012-09-20 | |||
| JP2021002548A | 2021-01-07 | |||
| JP2003282715A | 2003-10-03 | |||
| JPH10150150A | 1998-06-02 | |||
| JP2021057491A | 2021-04-08 | |||
| US20170084601A1 | 2017-03-23 | |||
| US20100244090A1 | 2010-09-30 | |||
| JP2004221569A | 2004-08-05 |
Attorney, Agent or Firm:
KAEDE PATENT ATTORNEYS' OFFICE (JP)
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