Title:
TRANSISTOR AND METHOD FOR FABRICATING THE SAME
Document Type and Number:
WIPO Patent Application WO/2021/227345
Kind Code:
A1
Abstract:
A transistor and a fabrication method thereof are provided. The transistor includes a substrate, a low-dimensional material layer, a gate, a source, a drain, a gate dielectric layer, and spacers. The low-dimensional material layer is provided above the substrate. The source is located at a first side of the gate. The drain is located at a second side of the gate. The gate dielectric layer is provided between the gate and the low-dimensional material layer. The spacers are provided between the source and the gate and between the drain and the gate, respectively, and have fixed charges. In the transistor, the fixed charges in the spacers are used to electrostatically dope the channel material in the spacer region.
Inventors:
XU HAITAO (CN)
Application Number:
PCT/CN2020/119486
Publication Date:
November 18, 2021
Filing Date:
September 30, 2020
Export Citation:
Assignee:
BEIJING HUA TAN YUAN XIN ELECTRONICS TECH CO LTD (CN)
International Classes:
H01L29/775; H01L21/336; H01L29/06
Foreign References:
| CN103518255A | 2014-01-15 | |||
| US20150287942A1 | 2015-10-08 | |||
| JP2010283209A | 2010-12-16 | |||
| US9608066B1 | 2017-03-28 | |||
| CN110534563A | 2019-12-03 | |||
| CN105390497A | 2016-03-09 |
Attorney, Agent or Firm:
TSINGYIHUA INTELLECTUAL PROPERTY LLC (CN)
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