Title:
TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2022/102137
Kind Code:
A1
Abstract:
The transistor according to the present disclosure comprises: a semiconductor substrate; a source pad provided to the upper surface of the semiconductor substrate; a plurality of source electrodes provided to the upper surface of the semiconductor substrate, the plurality of source electrodes each having a first end that is connected to the source pad and a second end that is on the side opposite from the source pad, and the plurality of source electrodes being lined up in an arrangement direction parallel to the upper surface of the semiconductor substrate; a plurality of drain electrodes provided to the upper surface of the semiconductor substrate, the plurality of drain electrodes being positioned so as to alternate with the plurality of source electrodes in the arrangement direction; a gate electrode provided to the upper surface of the semiconductor substrate; and first wiring that connects the second ends of a plurality of central-section electrodes, among the plurality of source electrodes, that are provided to a central section of the semiconductor substrate in the arrangement direction, the first wiring not being connected to the second ends of source electrodes other than the plurality of central-section electrodes among the plurality of source electrodes.
Inventors:
WATANABE SHINSUKE (JP)
Application Number:
PCT/JP2020/042653
Publication Date:
May 19, 2022
Filing Date:
November 16, 2020
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/338; H01L29/778; H01L29/812
Domestic Patent References:
| WO2019043918A1 | 2019-03-07 | |||
| WO2016098374A1 | 2016-06-23 | |||
| WO2016125323A1 | 2016-08-11 |
Foreign References:
| JP2017022303A | 2017-01-26 | |||
| JPH098064A | 1997-01-10 | |||
| JP2007059604A | 2007-03-08 | |||
| JP2002270822A | 2002-09-20 | |||
| JP2012009615A | 2012-01-12 |
Attorney, Agent or Firm:
TAKADA, TAKAHASHI & PARTNERS (JP)
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