Title:
TRANSPARENT AND FLEXIBLE RESISTIVE SWITCHING MEMORY AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2018/207972
Kind Code:
A1
Abstract:
The present invention relates to a transparent and flexible resistive switching memory to which a transparent electrode having an OMO structure is applied, and a method for manufacturing the same. In addition, the present invention may comprise: a lower electrode laminated on a substrate and formed to have a structure in which an oxide layer, a metal layer, and an oxide layer are sequentially laminated; and an upper electrode laminated on the lower electrode while intersecting the lower electrode, and formed to have a structure in which an oxide layer, a metal layer, and an oxide layer are sequentially laminated, wherein the oxide layers disposed between the metal layer of the lower electrode and the metal layer of the upper electrode at the intersection of the lower electrode and the upper electrode function as resistive switching layers, thereby providing a resistive switching memory which is flexible and transparent while ensuring excellent electrical conductivity.
Inventors:
KIM TAE GEUN (KR)
LEE BYEONG RYONG (KR)
LEE BYEONG RYONG (KR)
Application Number:
PCT/KR2017/008409
Publication Date:
November 15, 2018
Filing Date:
August 03, 2017
Export Citation:
Assignee:
UNIV KOREA RES & BUS FOUND (KR)
International Classes:
H01L45/00
Foreign References:
| JP2015534719A | 2015-12-03 | |||
| KR20140013364A | 2014-02-05 | |||
| KR20140116264A | 2014-10-02 | |||
| KR20160066971A | 2016-06-13 | |||
| US20110193051A1 | 2011-08-11 |
Attorney, Agent or Firm:
B&IP-JOOWON PATENT AND LAW FIRM (KR)
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