TREATMENT FLUID AND PATTERNING METHOD

WIPO Patent Application WO/2021/166600

A1

The present invention provides a treatment fluid that offers superior resolution and resist loss inhibition, as well as superior residue inhibition, when used to develop and/or wash (rinse) a resist, as well as a patterning method pertaining to said treatment fluid. The treatment fluid of the present invention is a resist patterning treatment fluid that is used for post-exposure developing and/or washing of a resist obtained from an actinic-light- or radiation-sensitive composition, the fluid containing a first organic solvent and a second organic solvent. The first organic solvent includes at least one type of solvent selected from the group consisting of C8–10 ketone solvents, C8–10 ester solvents other that acetate esters, and C8–10 aromatic hydrocarbon solvents. The second organic solvent includes at least one type of solvent selected from the group consisting of C5–7 ketone solvents and C5–7 ester solvents other than acetate esters.

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TSUCHIHASHI TORU (JP)
TAKAHASHI SATOMI (JP)
SHIMIZU TETSUYA (JP)

PCT/JP2021/003324

August 26, 2021

January 29, 2021

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FUJIFILM CORP (JP)

G03F7/038; G03F7/039; G03F7/20; G03F7/32; H01L21/027

WO2016208313A1	2016-12-29
WO2017057225A1	2017-04-06

JP2018081306A	2018-05-24
JP2013045055A	2013-03-04

ITOH Hideaki et al. (JP)

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