Title:
TRENCH SILICON CARBIDE MOSFET INTEGRATED WITH HIGH-SPEED FREEWHEELING DIODE AND PREPARATION METHOD
Document Type and Number:
WIPO Patent Application WO/2024/001422
Kind Code:
A1
Abstract:
The present invention relates to the technical field of power semiconductor devices, and in particular to a trench silicon carbide MOSFET integrated with a high-speed freewheeling diode and a preparation method therefor. The MOSFET of the present invention has a trench structure. In order to solve the problem of electric field concentration at corners of the bottom of a trench, a trench-type gated diode is added beside the MOSFET, and a P-type buried layer is added to the bottom of each trench, thereby mutually weakening electric field intensities of the trenches. In addition, the gated diode is connected in parallel with an original body diode of the device, so that the conduction voltage drop of the body diode is greatly reduced, thus reducing loss in a reverse freewheeling working mode. In addition, the gated diode is a unipolar device that does not have a minority carrier storage effect, and reverse recovery current of the body diode may be completely eliminated, thus reducing dynamic loss.
Inventors:
GU HANG (CN)
GAO WEI (CN)
DAI MAOZHOU (CN)
GAO WEI (CN)
DAI MAOZHOU (CN)
Application Number:
PCT/CN2023/087960
Publication Date:
January 04, 2024
Filing Date:
April 13, 2023
Export Citation:
Assignee:
NOVUS SEMICONDUCTORS CO LTD (CN)
International Classes:
H01L29/78; H01L21/336; H01L29/06
Foreign References:
| CN114823911A | 2022-07-29 | |||
| CN114551586A | 2022-05-27 | |||
| CN110998861A | 2020-04-10 | |||
| CN114122123A | 2022-03-01 | |||
| US6046470A | 2000-04-04 |
Attorney, Agent or Firm:
CHENGDU RUIDAO PATENT AGENCY (GENERAL PARTNERSHIP) (CN)
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