Title:
TRENCH TYPE MISFET
Document Type and Number:
WIPO Patent Application WO/2007/015500
Kind Code:
A1
Abstract:
A region wherein a source diffusion section (7) and a body diffusion section (8)
are to be formed are divided into rows of regions by trench sections (4). The trench
section (4) is not formed linearly but zigzag. The two adjacent trench sections
(4) are axisymmetrically arranged to have a symmetric axis in a longitudinal
direction of the trench section (4). Thus, in the forming region of the source
diffusion section (7) and the body diffusion section (8) divided by the trench
sections (4), wide regions and narrow regions are alternately formed, and the
body diffusion section (8) is arranged in the wide region. Thus, an improved power
MOSFET wherein reduced on-resistance per unit cell and improved layout effects
are both achieved at the same is provided.
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Inventors:
ADAN ALBERTO O
Application Number:
PCT/JP2006/315267
Publication Date:
February 08, 2007
Filing Date:
August 02, 2006
Export Citation:
Assignee:
SHARP KK (JP)
ADAN ALBERTO O
ADAN ALBERTO O
International Classes:
H01L29/78; H01L21/336
Foreign References:
| JP2004281524A | 2004-10-07 | |||
| JP2002050760A | 2002-02-15 | |||
| JPH11111976A | 1999-04-23 | |||
| JPH10270689A | 1998-10-09 | |||
| JP2004055803A | 2004-02-19 |
Attorney, Agent or Firm:
HARAKENZO WORLD PATENT & TRADEMARK (2-6 Tenjinbashi 2-chome Kita, Kita-k, Osaka-shi Osaka 41, JP)
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