Title:
TRIMMING THINNING
Document Type and Number:
WIPO Patent Application WO/2011/134896
Kind Code:
A3
Abstract:
A method of producing a heterostructure, the method comprising bonding a first wafer (110) to a second wafer (120) and a step of thinning the first wafer (110) carried out at least by grinding using a wheel (150) having its working surface (152) in contact with the exposed surface (113a) of the first wafer (110). The working surface (152) of the wheel (150) comprises abrasive particles with a mean dimension of 44 micrometers or less or 325 mesh or more. The rate of descent of the wheel (150) during the grinding step is reduced to at least 1 μm/sec when the working surface (152) of the wheel is at a distance of at least 250 μm from the bonding interface between the first and second wafers, the grinding step at 1 μm/sec being continued until the working surface (152) of the wheel (150) is at a distance from said bonding interface of 35 μm or less.
Inventors:
VAUFREDAZ ALEXANDRE (FR)
BROEKAART MARCEL (FR)
CASTEX ARNAUD (FR)
BROEKAART MARCEL (FR)
CASTEX ARNAUD (FR)
Application Number:
PCT/EP2011/056444
Publication Date:
March 15, 2012
Filing Date:
April 21, 2011
Export Citation:
Assignee:
SOITEC SILICON ON INSULATOR (FR)
VAUFREDAZ ALEXANDRE (FR)
BROEKAART MARCEL (FR)
CASTEX ARNAUD (FR)
VAUFREDAZ ALEXANDRE (FR)
BROEKAART MARCEL (FR)
CASTEX ARNAUD (FR)
International Classes:
H01L21/304; H01L27/146
Foreign References:
| EP1418617A2 | 2004-05-12 | |||
| EP0854500A1 | 1998-07-22 |
Attorney, Agent or Firm:
DESORMIERE, Pierre-Louis et al. (158 rue de l'Université, Paris Cedex 07, FR)
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