Title:
TUNGSTEN BULK POLISHING METHOD WITH IMPROVED TOPOGRAPHY
Document Type and Number:
WIPO Patent Application WO/2019/139828
Kind Code:
A1
Abstract:
The invention provides a method of chemically-mechanically polishing a substrate comprising providing a substrate comprising a tungsten layer on a surface of the substrate and a silicon oxide layer on a surface of the substrate, providing a chemical-mechanical polishing composition comprising a tungsten layer and a silicon oxide layer using a chemical-mechanical polishing composition comprising a) surface-modified colloidal silica particles, comprising a negatively-charged group on the surface of the particles, wherein the surface-modified colloidal silica particles have a negative charge, a particle size of about 90 nm to about 350 nm, and a zeta potential of about -20 mV to about -70 mV at a pH of about 2, b) an iron compound, c) a stabilizing agent, and d) an aqueous carrier, and contacting the substrate with a polishing pad and the chemical mechanical polishing composition to polish the substrate.
Inventors:
WARD WILLIAM J (US)
CARNES MATTHEW E (US)
CUI JI (US)
LONG KIM (US)
CARNES MATTHEW E (US)
CUI JI (US)
LONG KIM (US)
Application Number:
PCT/US2019/012268
Publication Date:
July 18, 2019
Filing Date:
January 04, 2019
Export Citation:
Assignee:
CABOT MICROELECTRONICS CORP (US)
International Classes:
H01L21/321; C09G1/02; C09K3/14; H01L21/304; H01L21/3105
Foreign References:
| US20060189152A1 | 2006-08-24 | |||
| US20090314744A1 | 2009-12-24 | |||
| US20160251547A1 | 2016-09-01 | |||
| US20150184028A1 | 2015-07-02 | |||
| KR20170039970A | 2017-04-12 |
Other References:
See also references of EP 3738140A4
Attorney, Agent or Firm:
OMHOLT, Thomas (US)
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