Title:
TUNNEL FIELD EFFECT TRANSISTOR, AND MANUFACTURING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2018/090301
Kind Code:
A1
Abstract:
Provided in the present invention are a tunnel field effect transistor, and manufacturing method thereof. The manufacturing method comprises: defining, by means of an STI process, an active region on a semiconductor substrate; manufacturing a sacrificial gate on a middle surface of the active region; performing ion implantation on one side to form an ion-doped portion of a line tunnel junction, and then manufacturing a sacrificial gate isolation wall to protect the ion-doped portion; forming another isolation wall and another ion implantation operation to form a source region and a drain region, wherein the ion concentration of the drain region is lower than or equal to the ion concentration of the ion-doped portion; removing the sacrificial gate, and depositing a gate dielectric layer, a work function layer, and a gate conductive layer sequentially; and manufacturing a source electrode and a drain electrode to form a tunnel field effect transistor. In this way, the present invention enables an area of a line tunnel junction to be accurately defined, and ensures the performance consistency of devices on a wafer, thus effectively enhancing process stability.
Inventors:
YANG XICHAO (CN)
ZHANG CHEN-XIONG (CN)
ZHANG CHEN-XIONG (CN)
Application Number:
PCT/CN2016/106291
Publication Date:
May 24, 2018
Filing Date:
November 17, 2016
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L29/739; H01L21/331
Foreign References:
| CN104347692A | 2015-02-11 | |||
| CN102237269A | 2011-11-09 | |||
| CN105378929A | 2016-03-02 | |||
| US20120228706A1 | 2012-09-13 |
Attorney, Agent or Firm:
LEADER PATENT & TRADEMARK FIRM (CN)
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