Title:
TUNNEL FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/104957
Kind Code:
A1
Abstract:
The present invention provides a tunnel field-effect transistor and a manufacturing method therefor. The tunnel field-effect transistor comprises: a source and a drain which are perpendicularly provided on the surface of a substrate, and a conductive channel region between the source and the drain. A gate oxide layer and a gate are provided around the periphery of the conductive channel region from inside to outside, and the conductive channel region is made of a narrow-band superlattice material.
Inventors:
KONG FANSHENG (CN)
ZHOU HUA (CN)
ZHOU HUA (CN)
Application Number:
PCT/CN2020/135748
Publication Date:
May 27, 2022
Filing Date:
December 11, 2020
Export Citation:
Assignee:
GUANGHUA LINGANG ENGINEERING APPLICATION AND TECH R&D SHANGHAI CO LTD (CN)
International Classes:
H01L21/331; H01L29/10; H01L29/15; H01L29/739
Foreign References:
| CN105047719A | 2015-11-11 | |||
| US20080179664A1 | 2008-07-31 | |||
| CN103811542A | 2014-05-21 | |||
| CN111146276A | 2020-05-12 |
Attorney, Agent or Firm:
SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY (CN)
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