Title:
TUNNEL MAGNETORESISTANCE ELEMENT
Document Type and Number:
WIPO Patent Application WO/2002/099905
Kind Code:
A1
Abstract:
A tunnel magnetoresistance element which increases a degree of spin polarization to obtain a larger magnetoresistance effect by varying only the film thickness of an existing substance excellent in magnetic characteristics without varying the chemical composition. The tunnel magnetoreistance element has a substrate film (non−magnetic or antiferromagnetic metal film) (1), an ultrathin ferromagnetic film (2) formed over this substrate film (1), an insulation film (3) formed over this ultrathin ferromagnetic film (2), and a ferromagnetic electrode (4) formed over this insulation film (3).
Inventors:
NAGAHAMA TARO (JP)
YUASA SHINJI (JP)
SUZUKI YOSHISHIGE (JP)
YUASA SHINJI (JP)
SUZUKI YOSHISHIGE (JP)
Application Number:
PCT/JP2002/005049
Publication Date:
December 12, 2002
Filing Date:
May 24, 2002
Export Citation:
Assignee:
NAT INST OF ADVANCED IND SCIEN (JP)
JAPAN SCIENCE & TECH CORP (JP)
NAGAHAMA TARO (JP)
YUASA SHINJI (JP)
SUZUKI YOSHISHIGE (JP)
JAPAN SCIENCE & TECH CORP (JP)
NAGAHAMA TARO (JP)
YUASA SHINJI (JP)
SUZUKI YOSHISHIGE (JP)
International Classes:
G01R33/06; G01R33/09; G11C11/16; H01F10/32; H01L21/8246; H01L27/22; H01L43/08; (IPC1-7): H01L43/08; G01R33/09; G11B5/39; H01F10/32; H01L27/105
Domestic Patent References:
| WO1999041792A1 | 1999-08-19 |
Foreign References:
| JPH09181374A | 1997-07-11 | |||
| JP2000150985A | 2000-05-30 | |||
| EP0936622A2 | 1999-08-18 | |||
| JPH11354859A | 1999-12-24 | |||
| JP2000322714A | 2000-11-24 | |||
| JP2001093119A | 2001-04-06 | |||
| JP2001102656A | 2001-04-13 |
Other References:
SHINJA YUASA ET AL.: "Kohinshitsu kyojisei tunnel setsugo soshi no sakusei", ETL NEWS, vol. 597, October 1990 (1990-10-01), pages 4 - 7, XP002958957
See also references of EP 1391942A4
See also references of EP 1391942A4
Attorney, Agent or Firm:
Shimizu, Mamoru (7-10 Kanda-mitoshiro-ch, Chiyoda-ku Tokyo, JP)
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