TUNNEL MAGNETORESISTIVE EFFECT FILM AND MAGNETIC DEVICE USING SAME

WIPO Patent Application WO/2019/131394

A1

According to the present invention, a tunnel magnetoresistive effect (TMR) element 11 that is able to properly operate in a high temperature environment, a high magnetic field environment and the like is provided with an exchange coupled film 10 that has a first ferromagnetic layer 31 which is at least a part of a fixed magnetic layer 3 and an antiferromagnetic layer 2 which is superposed on the first ferromagnetic layer 31. The antiferromagnetic layer 2 comprises an X(Cr-Mn) layer which contains Mn, Cr and one or more elements X that are selected from the group consisting of platinum group elements and Ni; the X(Cr-Mn) layer comprises a first region R1 that is relatively proximal to the first ferromagnetic layer 31 and a second region R2 that is relatively distal to the first ferromagnetic layer 31; and the Mn content in the first region R1 is higher than the Mn content in the second region R2.

JP2004047583	MAGNETORESISTANCE EFFECT ELEMENT, AND MAGNETIC HEAD, MAGNETIC MEMORY, AND MAGNETIC RECORDING EQUIPMENT USING THE MAGNETORESISTANCE EFFECT ELEMENT
JP3488652	MAGNETIC RESISTANCE EFFECT FILM, ITS MANUFACTURE AND MAGNETIC HEAD USING THE SAME

SAITO MASAMICHI (JP)
KOIKE FUMIHITO (JP)

PCT/JP2018/046842

July 04, 2019

December 19, 2018

Click for automatic bibliography generation  

ALPS ALPINE CO LTD (JP)

H01L43/08; G01B7/00; G01R33/09; H01F10/12; H01F10/32; H01L21/8239; H01L27/105; H01L43/10

JP2003338644A	2003-11-28
JP2009004692A	2009-01-08

OKUBO, Katsuyuki (JP)

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