Title:
TWO-DIMENSIONAL MATERIAL DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2019/244548
Kind Code:
A1
Abstract:
The present invention involves: forming a flat surface (101a) on the bottom surface of a recess (104) by further expanding, with step flowing by heating, a terrace of a crystal surface on the bottom surface of the recess (104); forming, on the flat surface (101a) that was formed, a two-dimensional material layer (not shown) comprising a two-dimensional material; and then manufacturing a device (not shown) comprising the two-dimensional material layer.
Inventors:
SEKINE YOSHIAKI (JP)
TANIYASU YOSHITAKA (JP)
HIBINO HIROKI (JP)
TANIYASU YOSHITAKA (JP)
HIBINO HIROKI (JP)
Application Number:
PCT/JP2019/020253
Publication Date:
December 26, 2019
Filing Date:
May 22, 2019
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE (JP)
International Classes:
C01B32/188; C30B29/02; C30B33/02; H01L21/336; H01L29/78; H01L29/786
Domestic Patent References:
| WO2008126541A1 | 2008-10-23 | |||
| WO2017188382A1 | 2017-11-02 |
Foreign References:
| JP2009527127A | 2009-07-23 | |||
| JPH08138986A | 1996-05-31 | |||
| JP2011230959A | 2011-11-17 | |||
| JP2017043495A | 2017-03-02 |
Other References:
FUKIDOME, H. ET AL.: "Precise control of epitaxy of graphene by microfabricating SiC substrate", APPLIED PHYSICS LETTERS, vol. 101, 2012, pages 041605 - 1 - 041605-4, Retrieved from the Internet
SEKINE, YOSHIAKI ET AL.: "Growth of Graphene on a Single SiC Terrace", LECTURE PREPRINTS OF THE 65TH JSAP SPRING MEETING , 2018, vol. 65, 5 March 2018 (2018-03-05), pages 17a - C202-3
HEER, WALT A. ET AL.: "Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide", PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, vol. 108, no. 41, 2011, pages 16900 - 16905, XP055664669, Retrieved from the Internet
FUKIDOME, HIROKAZU: "Fabrication of ultra-high quality graphene with the assistance of substrate micromachining", MATERIAL STAGE, vol. 13, no. 3, 2013, pages 23 - 26
SEKINE, YOSHIAKI ET AL.: "Growth of Graphene on a Single SiC Terrace", LECTURE PREPRINTS OF THE 65TH JSAP SPRING MEETING , 2018, vol. 65, 5 March 2018 (2018-03-05), pages 17a - C202-3
HEER, WALT A. ET AL.: "Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide", PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, vol. 108, no. 41, 2011, pages 16900 - 16905, XP055664669, Retrieved from the Internet
FUKIDOME, HIROKAZU: "Fabrication of ultra-high quality graphene with the assistance of substrate micromachining", MATERIAL STAGE, vol. 13, no. 3, 2013, pages 23 - 26
Attorney, Agent or Firm:
YAMAKAWA, Shigeki et al. (JP)
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