Title:
TWO-DIMENSIONAL PEROVSKITE FORMING MATERIAL, LAMINATE, ELEMENT, AND TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2017/086337
Kind Code:
A1
Abstract:
This two-dimensional perovskite forming material, which is provided with a surface upon which ammonium halide groups are arranged, has high carrier mobility. The two-dimensional perovskite forming material includes a monomolecular layer having an ammonium halide group at a terminal of each molecular structure therein, the ammonium halide groups of the monomolecular layer preferably being arranged on the surface of the material.
Inventors:
MATSUSHIMA TOSHINORI (JP)
QIN CHUANJIANG (JP)
ADACHI CHIHAYA (JP)
QIN CHUANJIANG (JP)
ADACHI CHIHAYA (JP)
Application Number:
PCT/JP2016/083932
Publication Date:
May 26, 2017
Filing Date:
November 16, 2016
Export Citation:
Assignee:
UNIV KYUSHU NAT UNIV CORP (JP)
International Classes:
H01L21/368; H01L29/786
Foreign References:
| JP2001323387A | 2001-11-22 | |||
| JP2000260999A | 2000-09-22 | |||
| JP2002110999A | 2002-04-12 |
Other References:
ZHAO, YIXIN ET AL.: "Effective hole extraction using MoOx-Al contact in perovskite CH 3NH3PbI3 solar cells", APPLIED PHYSICS LETTERS, vol. 104, no. 21, 30 May 2014 (2014-05-30), pages 213906 - 1 - 213906-4, XP012186036
TOSHINORI MATSUSHIMA ET AL.: "High-carrier-mobility field-effect transistors based on organic-inorganic perovskite semiconductors", PROCEEDINGS OF THE 2016 IEICE GENERAL CONFERENCE ELECTRONICS, vol. 2, 15 March 2016 (2016-03-15), pages SS-43 - SS-44, XP060078512
TOSHINORI MATSUSHIMA ET AL.: "High-carrier-mobility field-effect transistors based on organic-inorganic perovskite semiconductors", PROCEEDINGS OF THE 2016 IEICE GENERAL CONFERENCE ELECTRONICS, vol. 2, 15 March 2016 (2016-03-15), pages SS-43 - SS-44, XP060078512
Attorney, Agent or Firm:
SIKS & CO. (JP)
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