ULTRA LOW DIELECTRIC MATERIALS USING HYBRID PRECURSORS CONTAINING SILICON WITH ORGANIC FUNCTIONAL GROUPS BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION

WIPO Patent Application WO/2011/106218

A3

Methods for depositing a low dielectric constant layer on a substrate are provided. In one embodiment, the method includes introducing one or more organosilicon compounds into a chamber, wherein the one or more organosilicon compounds comprise a silicon atom and a porogen component bonded to the silicon atom, reacting the one or more organosilicon compounds in the presence of RF power to deposit a low dielectric constant layer on a substrate in the chamber, and post-treating the low dielectric constant layer to substantially remove the porogen component from the low dielectric constant layer. Optionally, an inert carrier gas, an oxidizing gas, or both may be introduced into the processing chamber with the one or more organosilicon compounds. The post-treatment process may be an ultraviolet radiation cure of the deposited material. The UV cure process may be used concurrently or serially with a thermal or e-beam curing process. The low dielectric constant layers have good mechanical properties and a desirable dielectric constant.

YIM KANG SUB (US)
DEMOS ALEXANDROS T (US)

PCT/US2011/025093

January 12, 2012

February 16, 2011

Click for automatic bibliography generation  

APPLIED MATERIALS INC (US)
YIM KANG SUB (US)
DEMOS ALEXANDROS T (US)

C23C16/18; C23C16/30; C23C16/50; H01L21/205

KR20090115915A	2009-11-10
US7345000B2	2008-03-18
US20100007031A1	2010-01-14
US7579286B2	2009-08-25
US20080283972A1	2008-11-20

PATTERSON, Todd, B. et al. (L.L.P.3040 Post Oak Blvd., Suite 150, Houston TX, US)

View/Download PDF      PDF Help

Previous Patent: PROCESS FOR UPGRADING HYDROCARBONS AND DEVICE FOR USE THEREIN

Next Patent: METHOD OF PROCESSING SEISMIC DATA