Title:
ULTRASONIC PROBE MANUFACTURING METHOD AND ULTRASONIC PROBE
Document Type and Number:
WIPO Patent Application WO/2010/082519
Kind Code:
A1
Abstract:
The manufacturing yield of semiconductor devices (CMUT) is improved. Before a polyimide film, which serves as a protection film, is formed, a membrane is caused to vibrate repetitively, thereby evaluating the withstand voltage between upper and lower electrodes. The upper electrode of any faulty CMUT cell, in which degradation in the withstand voltage between the upper and lower electrodes occurs due to the repetitive vibration of the membrane, is removed in advance, thereby electrically disconnecting the faulty CMUT from the other normal CMUT cells. As a result, in a block (RB) or a channel (RCH) including the CMUT cells (RC) as repaired, the degradation in the withstand voltage between the upper and lower electrodes is prevented from occurring after the repetitive vibration of the membrane.
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Inventors:
KOBAYASHI TAKASHI (JP)
MACHIDA SHUNTARO (JP)
MACHIDA SHUNTARO (JP)
Application Number:
PCT/JP2010/050068
Publication Date:
July 22, 2010
Filing Date:
January 06, 2010
Export Citation:
Assignee:
HITACHI MEDICAL CORP (JP)
KOBAYASHI TAKASHI (JP)
MACHIDA SHUNTARO (JP)
KOBAYASHI TAKASHI (JP)
MACHIDA SHUNTARO (JP)
International Classes:
A61B8/00; H04R31/00
Foreign References:
| JP2006352808A | 2006-12-28 | |||
| JP2006343315A | 2006-12-21 | |||
| JP2008518553A | 2008-05-29 | |||
| JP2006333952A | 2006-12-14 |
Attorney, Agent or Firm:
TSUTSUI, YAMATO (JP)
Tsutsui Daiwa (JP)
Tsutsui Daiwa (JP)
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