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Title:
ULTRAVIOLET LIGHT-EMITTING DIODE AND ELECTRIC APPARATUS PROVIDED WITH SAME
Document Type and Number:
WIPO Patent Application WO/2017/073046
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing an ultraviolet light-emitting diode for which the carrier injection efficiency thereof can be increased, and an electric apparatus provided with same. This UVLED element (100) which is an ultraviolet light-emitting diode is provided with the following in the order given: an n-type conductive layer (132); a light emitting layer (134); an electronic block layer (138); and a p-type contact layer (150). When the band-gap energy of the p-type contact layer (150) is Econtact and the band-gap energy of the electronic block layer (138) is EEBL, the band-gap energy of the electronic block layer (138) satisfies Econtact ≤ EEBL. The electronic apparatus is provided with the UVLED element (100) as an ultraviolet-ray emission source.

Inventors:
HIRAYAMA HIDEKI (JP)
JO MASAFUMI (JP)
MINO TAKUYA
NOGUCHI NORIMICHI
TAKANO TAKAYOSHI
SAKAI JUN
Application Number:
PCT/JP2016/004678
Publication Date:
May 04, 2017
Filing Date:
October 25, 2016
Export Citation:
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Assignee:
RIKEN (JP)
PANASONIC CORP (JP)
International Classes:
H01L33/02
Domestic Patent References:
WO2014123092A12014-08-14
Foreign References:
JP2005093895A2005-04-07
Other References:
NORITOSHI MAEDA ET AL.: "Realization of High Efficiency Deep UV LED by using Transparent p-AlGaN Contact Layer", IEICE TECHNICAL REPORT, vol. 114, no. 329, 21 November 2013 (2013-11-21), pages 87 - 90, XP055499229
MASAFUMI JO ET AL.: "Deep UV Light-emitting Diodes Containing a p-AlGaN Contacting Layer with High Al Content", IEICE TECHNICAL REPORT, vol. 114, no. 336, 20 November 2014 (2014-11-20), pages 77 - 80, XP055499247
See also references of EP 3370268A4
Attorney, Agent or Firm:
NISHIKAWA, Yoshikiyo et al. (JP)
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