Title:
UNIFORM DRY ETCH IN TWO STAGES
Document Type and Number:
WIPO Patent Application WO/2012/106033
Kind Code:
A3
Abstract:
A method of etching silicon oxide from a multiple trenches is described which allows more homogeneous etch rates among trenches. The surfaces of the etched silicon oxide within the trench following the etch may also be smoother. The method includes two dry etch stages followed by a sublimation step. The first dry etch stage removes silicon oxide quickly and produces large solid residue granules. The second dry etch stage remove silicon oxide slowly and produces small solid residue granules in amongst the large solid residue granules. Both the small and large solid residue are removed in the ensuing sublimation step. There is no sublimation step between the two dry etch stages.
Inventors:
YANG DONGQING (US)
TANG JING (US)
INGLE NITIN (US)
TANG JING (US)
INGLE NITIN (US)
Application Number:
PCT/US2011/064724
Publication Date:
November 29, 2012
Filing Date:
December 13, 2011
Export Citation:
Assignee:
APPLIED MATERIALS INC (US)
YANG DONGQING (US)
TANG JING (US)
INGLE NITIN (US)
YANG DONGQING (US)
TANG JING (US)
INGLE NITIN (US)
International Classes:
H01L21/3065
Foreign References:
| US20080182382A1 | 2008-07-31 | |||
| US6527968B1 | 2003-03-04 | |||
| US20030077909A1 | 2003-04-24 | |||
| US6197680B1 | 2001-03-06 |
Attorney, Agent or Firm:
SHAFFER, William et al. (Two Embarcardero Center 8th Floo, San Francisco California, US)
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