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Title:
VAPOR DEPOSITION PRECURSOR HAVING EXCELLENT THERMAL STABILITY AND REACTIVITY AND PREPARING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2019/066179
Kind Code:
A1
Abstract:
The present invention relates to a vapor deposition compound capable of thin film deposition through vapor deposition and, specifically, to nickel and cobalt precursors capable of being applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and having excellent thermal stability and reactivity, and to a preparing method therefor.

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Inventors:
PARK JUNG WOO (KR)
JANG DONGHAK (KR)
WOO KYOUNGTACK (KR)
Application Number:
PCT/KR2018/004929
Publication Date:
April 04, 2019
Filing Date:
April 27, 2018
Export Citation:
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Assignee:
HANSOL CHEMICAL CO LTD (KR)
International Classes:
C07F15/04; C23C16/18; C23C16/455; H01L21/02
Domestic Patent References:
WO2006012294A22006-02-02
Foreign References:
US6103459A2000-08-15
KR20080093393A2008-10-21
KR20070063042A2007-06-18
Other References:
DATABASE CAS 14 February 2000 (2000-02-14), retrieved from STN Database accession no. 255885-24-6
Attorney, Agent or Firm:
HANYANG PATENT FIRM (KR)
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