Title:
VARIABLE LOW RESISTANCE LINE NONVOLATILE MEMORY DEVICE AND METHOD FOR OPERATING SAME
Document Type and Number:
WIPO Patent Application WO/2020/091307
Kind Code:
A1
Abstract:
One embodiment of the present invention is a variable low resistance line memory device and a method for operating same. Disclosed is a memory device and a method for operating same, the memory device comprising: a base including a spontaneous polarization material; a gate disposed adjacent to the base; at least two polarization regions which are formed in the base by applying an electric field to the base through the gate, and have polarizations in different directions; a variable low resistance line which corresponds to the boundary between the polarization regions selectively having the polarizations in different directions; a source positioned to be in contact with the variable low resistance line; and a drain positioned to be in contact with the variable low resistance line, wherein the variable low resistance line is formed in a region of the base in which the electrical resistance is lower than in the other regions adjacent to the variable low resistance line.
Inventors:
SON JONG HWA (KR)
SON JONG YEOG (KR)
SON JONG YEOG (KR)
Application Number:
PCT/KR2019/014052
Publication Date:
May 07, 2020
Filing Date:
October 24, 2019
Export Citation:
Assignee:
VMEMORY CORP (KR)
International Classes:
H01L45/00
Foreign References:
| KR20180106661A | 2018-10-01 | |||
| KR20060010785A | 2006-02-02 | |||
| KR20080030732A | 2008-04-07 | |||
| US20070128798A1 | 2007-06-07 | |||
| KR20060106165A | 2006-10-12 |
Attorney, Agent or Firm:
Y.P.LEE, MOCK & PARTNERS (KR)
Download PDF: