VERTICAL-CAVITY SURFACE EMITTING LASER UTILIZING A REVERSED-BIASED DIODE

WIPO Patent Application WO2003010860

A3

A current confinement element [131] that can be used in constructing light-emitting devices. The current confinement element [131] includes a top layer [133] and an aperture-defining layer. The top layer [133] includes a top semiconducting material of a first conductivity type that is transparent to light. The aperture-defining layer includes an aperture region [132] and a confinement region [131]. The aperture region [132] includes an aperture semiconducting material of the first conductivity type that is transparent to light. The confinement region [131] surrounds the aperture region [132] and includes a material that has been doped to provide a high resistance to the flow of current. In one embodiment of the invention, the confinement region [131] includes a semiconducting material of a second conductivity type.

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LIAO ANDREW SHUH-HUEI
HASNAIN GHULAM
KUO CHIHPING
KUO HAO-CHUNG
SHI ZHIQING
TRIEU MINH NGOC

PCT/US2002/022784

October 23, 2003

July 17, 2002

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LUXNET CORP (US)

H01S5/183; H01S5/22; (IPC1-7): H01S5/183

US5625637A

1997-04-29

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CHOQUETTE K.D. ET AL.: "Cavity characteristics of selectivity oxidized vertical-cavity lasers", APPL. PHYS. LETT., vol. 66, no. 25, 19 June 1995 (1995-06-19), pages 3413 - 3415, XP000520299

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