Title:
VERTICAL CAVITY SURFACE-EMITTING LASER ELEMENT, AND ARRAY OF VERTICAL CAVITY SURFACE-EMITTING LASER ELEMENTS
Document Type and Number:
WIPO Patent Application WO/2023/243298
Kind Code:
A1
Abstract:
[Problem] To provide a vertical cavity surface-emitting laser element and an array of vertical cavity surface emitting laser elements having excellent luminous efficiency and reliability by using a GaAs substrate. [Solution] A vertical cavity surface-emitting laser element according to the present technology comprises a substrate and a light emitting unit. The substrate is composed of InxGa1-xAs (where x is 0.005-0.015) and has a carrier concentration of less than 5×1017/cm3. The light emitting unit is provided with: a first distributed Bragg reflector (DBR) that is formed on the substrate and reflects light having a specific wavelength; a second DBR that reflects light having the wavelength; and an active region that is disposed between the first DBR and the second DBR and generates light emission due to the recombination of carriers.
Inventors:
ARAKIDA TAKAHIRO (JP)
Application Number:
PCT/JP2023/018567
Publication Date:
December 21, 2023
Filing Date:
May 18, 2023
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01S5/183
Foreign References:
| JP2009260093A | 2009-11-05 | |||
| JP2003273459A | 2003-09-26 | |||
| JP2005252111A | 2005-09-15 | |||
| JP2015041627A | 2015-03-02 |
Attorney, Agent or Firm:
MINAMI AOYAMA PATENT AND TRADEMARK ATTORNEYS (JP)
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