Title:
VERTICAL FIELD EFFECT TRANSISTOR, AND MANUFACTURING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2023/106815
Kind Code:
A1
Abstract:
The present invention relates to a vertical field effect transistor, and a manufacturing method thereof. The vertical field effect transistor according to an embodiment may include: a substrate; a source region, an insulating layer, and a drain region which are stacked in a vertical direction on the substrate; and a tunnel barrier, an active region, a gate barrier, and a gate region which are stacked so as to surround the upper surface of the substrate, and the source region, the insulating layer, and the drain region which are stacked in the vertical direction.
Inventors:
KANG MYOUNGGON (KR)
BAIK SEUNGJAE (KR)
KIM GEONWOONG (KR)
BAIK SEUNGJAE (KR)
KIM GEONWOONG (KR)
Application Number:
PCT/KR2022/019767
Publication Date:
June 15, 2023
Filing Date:
December 07, 2022
Export Citation:
Assignee:
KOREA NATIONAL UNIV OF TRANSPORTATION INDUSTRY ACADEMIC COOPERATION FOUNDATION (KR)
International Classes:
H01L29/78; H01L29/08; H01L29/20; H01L29/66
Foreign References:
| KR20200036950A | 2020-04-07 | |||
| KR20180069671A | 2018-06-25 | |||
| KR20180049569A | 2018-05-11 | |||
| KR101743570B1 | 2017-06-05 | |||
| JP2010239063A | 2010-10-21 |
Attorney, Agent or Firm:
KIM, Jong Sun (KR)
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