Title:
VERTICAL SEMICONDUCTOR STRUCTURE OF INTEGRATED SAMPLING STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/253009
Kind Code:
A1
Abstract:
The present invention provides a vertical semiconductor structure of an integrated sampling structure and a manufacturing method therefor. The vertical semiconductor structure of an integrated sampling structure comprises: a vertical semiconductor structure primitive cell, a sampling primitive cell, a control electrode, a first electrode, a second electrode, and a sampling electrode. According to embodiments of the present invention, first, the sampling electrode can sample a voltage difference between the first electrode and the second electrode in real time; a PN junction is formed between a first/second P-type diffusion region and a second N-type base region of the sampling primitive cell, and the PN junction forms a barrier for blocking electron emission of a sampling electrode terminal. Therefore, a voltage signal of the sampling electrode is input to a protection circuit, and the protection circuit can safely and quickly detect whether the vertical semiconductor structure is in a desaturation state while determining that the vertical semiconductor structure primitive cell is in an open state. Secondly, a sampling resistor is connected in series between the sampling electrode and the first electrode, the positive voltage of the sampling electrode increases the height of the barrier, and the stable operation of the sampling primitive cell can be ensured.
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Inventors:
JIA PENGFEI (CN)
RUI QIANG (CN)
LI WEI (CN)
RUI QIANG (CN)
LI WEI (CN)
Application Number:
PCT/CN2022/094129
Publication Date:
December 08, 2022
Filing Date:
May 20, 2022
Export Citation:
Assignee:
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO LTD (CN)
International Classes:
H01L23/544; H01L21/331; H01L21/336; H01L29/739; H01L29/78
Foreign References:
| CN110875309A | 2020-03-10 | |||
| CN108767006A | 2018-11-06 | |||
| CN103762231A | 2014-04-30 | |||
| CN106298917A | 2017-01-04 | |||
| US20200020800A1 | 2020-01-16 |
Attorney, Agent or Firm:
SHANGHAI SAVVY INTELLECTUAL PROPERTY AGENCY (CN)
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