Title:
VIA FORMATION FOR A MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/126558
Kind Code:
A3
Abstract:
Methods, systems, and devices for via formation in a memory device are described. A memory cell stack for a memory array may be formed. In some examples, the memory cell stack may comprise a storage element. A via may also be formed in an area outside of the memory array, and the via may protrude from a material that surrounds the via. A material may then be formed above the memory cell stack and also above the via, and the top surface of the barrier material may be planarized until at least a portion of the via is exposed. A subsequently formed material may thereby be in direct contact with the top of the via, while a portion of the initially formed material may remain above the memory cell stack.
Inventors:
ECONOMY DAVID (US)
BEEMER ANDREW (US)
BEEMER ANDREW (US)
Application Number:
PCT/US2020/063415
Publication Date:
September 30, 2021
Filing Date:
December 04, 2020
Export Citation:
Assignee:
MICRON TECHNOLOGY INC (US)
International Classes:
H01L27/24; H01L45/00
Domestic Patent References:
| WO2019182657A1 | 2019-09-26 |
Foreign References:
| US20150064899A1 | 2015-03-05 | |||
| US20120156871A1 | 2012-06-21 | |||
| KR100881507B1 | 2009-02-05 | |||
| US20010046784A1 | 2001-11-29 |
Attorney, Agent or Firm:
HARRIS, Philip (US)
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