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Title:
WAFER OF COMPOUND SEMICONDUCTOR
Document Type and Number:
WIPO Patent Application WO/1990/011391
Kind Code:
A1
Abstract:
This invention relates to an epitaxial wafer of a compound semiconductor comprising a heteroepitaxial crystal layer formed on a substrate comprising a compound semiconductor crystal, wherein the substrate is substantially circular and free from dislocation.

Inventors:
IWASAKI TAKASHI (JP)
YAMABAYASHI NAOYUKI (JP)
MIURA YOSHIKI (JP)
Application Number:
PCT/JP1990/000348
Publication Date:
October 04, 1990
Filing Date:
March 15, 1990
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
C30B15/00; C30B25/02; C30B29/40; H01L21/20; H01L29/06; (IPC1-7): C30B29/40
Foreign References:
JPS60112694A1985-06-19
JPS61261300A1986-11-19
JPH05439387A
JPS52143761A1977-11-30
Other References:
See also references of EP 0416128A4
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