Title:
WAFER MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/106018
Kind Code:
A1
Abstract:
This wafer manufacturing method for obtaining a wafer from an ingot (2) includes the following procedures, steps, or processes. A surface (21) on one end side of the ingot in the height direction is irradiated with a laser beam having transmissivity, thereby forming a peel layer (25) at a depth that corresponds to the thickness of the wafer from the surface. At this time, the laser beam is irradiated so that the irradiation frequency is higher in a facet region (RF) relative to a non-facet region (RN). A wafer precursor (26) that is a portion between the surface of the ingot and the peel layer is peeled from the ingot at the peel layer. The wafer is obtained by electrochemically and mechanically flattening a main surface of a plate-shaped peel body obtained by peeling the wafer precursor from the ingot.
Inventors:
YASUDA KOICHIRO (JP)
TAKAGI RYOTA (JP)
KAWAZU TOMOKI (JP)
NOMURA SODAI (JP)
SHIRAI HIDEAKI (JP)
SOLTANI BAHMAN (JP)
SOBAJIMA SHUNSUKE (JP)
TAKAGI RYOTA (JP)
KAWAZU TOMOKI (JP)
NOMURA SODAI (JP)
SHIRAI HIDEAKI (JP)
SOLTANI BAHMAN (JP)
SOBAJIMA SHUNSUKE (JP)
Application Number:
PCT/JP2022/041571
Publication Date:
June 15, 2023
Filing Date:
November 08, 2022
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
H01L21/304; B23K26/53
Domestic Patent References:
| WO2020090896A1 | 2020-05-07 |
Foreign References:
| JP2020077783A | 2020-05-21 | |||
| JP2020047619A | 2020-03-26 | |||
| JP2020031134A | 2020-02-27 | |||
| JP2017220631A | 2017-12-14 |
Attorney, Agent or Firm:
YOU-I PATENT FIRM (JP)
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