Title:
WAFER SUPPORT, CHEMICAL VAPOR PHASE GROWTH DEVICE, EPITAXIAL WAFER AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2016/088671
Kind Code:
A1
Abstract:
Provided is a manufacturing device capable of efficiently and sufficiently reducing epitaxial crowning. The wafer support according to the present invention is used in a chemical vapor phase growth device that grows an epitaxial film on a principal surface of a wafer by chemical vapor phase growth. The wafer support has a wafer-mounting surface upon which a substrate is mounted, and a wafer-supporting part that rises up so as to surround the periphery of the wafer. The height from the tip of the wafer-supporting part to the principal surface of the wafer mounted on the wafer-mounting surface is at least 1 mm.
Inventors:
MUTO DAISUKE (JP)
NORIMATSU JUN (JP)
NORIMATSU JUN (JP)
Application Number:
PCT/JP2015/083377
Publication Date:
June 09, 2016
Filing Date:
November 27, 2015
Export Citation:
Assignee:
SHOWA DENKO KK (JP)
International Classes:
H01L21/205; C23C16/42; C23C16/458; C23C16/52; C30B25/12; C30B29/36; H01L21/683
Foreign References:
| JPH06310442A | 1994-11-04 | |||
| JPH10150095A | 1998-06-02 | |||
| JP2013038153A | 2013-02-21 | |||
| JPH02174114A | 1990-07-05 | |||
| JP2009164162A | 2009-07-23 | |||
| JP2014027028A | 2014-02-06 |
Attorney, Agent or Firm:
SHIGA Masatake et al. (JP)
Masatake Shiga (JP)
Masatake Shiga (JP)
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