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Title:
WAVELENGTH TUNABLE SEMICONDUCTOR LASER
Document Type and Number:
WIPO Patent Application WO/2017/092094
Kind Code:
A1
Abstract:
A wavelength-tunable semiconductor laser comprising an active area (10), a phase area (20), and a grating area (30). The grating area (30) comprises a sampling Bragg grating. The reflection spectrum of the sampling Bragg grating is a comb-like reflection spectrum, where the center wavelength thereof is away from an active area gain peak. The active area (10), the phase area (20), and the grating area (30) are longitudinally connected in series. In the active area (10), a reflective film (12) is coated onto a portion of an end surface and, at the same time, a low-reflective film (32) is coated onto an end surface of the grating area (30). The areas respectively are provided with electrodes (11, 21, and 31). The active area electrode (11) is used for current injection for the active area. The phase area electrode (21) and the grating area electrode (31) are used for current injection for a waveguide or changing the refractive index of a phase area waveguide and that of a grating area waveguide by means of heating. Solved is the technical problem with using a common lithography technique to manufacture quickly tunable semiconductor lasers of different initial wavelengths and facilitates the manufacturing of complex photonic integrated components.

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Inventors:
ZHAO JIANYI (CN)
WANG RENFAN (CN)
ZHANG MINGYANG (CN)
Application Number:
PCT/CN2015/098545
Publication Date:
June 08, 2017
Filing Date:
December 24, 2015
Export Citation:
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Assignee:
WUHAN TELECOMM DEVICES CO LTD (CN)
International Classes:
H01S5/125
Foreign References:
CN103532014A2014-01-22
CN101517849A2009-08-26
US4896325A1990-01-23
CN101227061A2008-07-23
CN102751659A2012-10-24
CN1428018A2003-07-02
Other References:
DONG, LEI ET AL.: "Theoretical and Experimental Investigation of SGDBR on Sampled Grating", CHINESE JOURNAL OF SEMICONDUCTORS, vol. 29, no. 2, 29 February 2008 (2008-02-29), ISSN: 1674-4926
JAYARAMAN, V. ET AL.: "Theory, Design, and Performance of Extended Tuning Range Semiconductor Lasers with Sampled Gratings", IEEE JOURNAL OF QUANTUM ELECTRONICS, vol. 29, no. 6, 30 June 1993 (1993-06-30), XP000397620, ISSN: 0018-9197
Attorney, Agent or Firm:
BEIJING HUIZE INTELLECTUAL PROPERTY LAW LLC (CN)
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