Title:
WORKPIECE CUTTING METHOD AND SEMICONDUCTOR CHIP
Document Type and Number:
WIPO Patent Application WO/2018/193964
Kind Code:
A1
Abstract:
This workpiece cutting method is provided with: a first step of preparing a workpiece having a single crystal silicon substrate and a functional element layer provided on a first primary surface side; a second step of irradiating the workpiece with a laser beam to form at least one row of modified regions, inside the single crystal silicon substrate, along each of a plurality of cutting scheduled lines, and forming a crack, in the workpiece, along each of the plurality of cutting scheduled lines so that the crack extends between the at least one row of modified regions and a second primary surface of the workpiece; and a third step of forming a groove, open to the second primary surface, in the workpiece, the groove being formed along each of the plurality of cutting scheduled lines by dry etching the workpiece from the second primary surface side. In the third step, dry etching is performed from the second primary surface side so that, through the removal of at least one row of modified regions, a recess and protrusion region is formed on the inner surface of the groove, wherein the recess and protrusion region exhibits a recess and protrusion shape corresponding to the removed modified regions and exposes the single crystal silicon.
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Inventors:
SAKAMOTO TAKESHI (JP)
Application Number:
PCT/JP2018/015394
Publication Date:
October 25, 2018
Filing Date:
April 12, 2018
Export Citation:
Assignee:
HAMAMATSU PHOTONICS KK (JP)
International Classes:
B23K26/53; H01L21/301; H01L21/683
Domestic Patent References:
| WO2008146744A1 | 2008-12-04 |
Foreign References:
| JP2009039755A | 2009-02-26 | |||
| JP2013055120A | 2013-03-21 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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