Title:
WURTZRITE THIN FILM, LAMINATE CONTAINING WURTZRITE CRYSTAL LAYER, AND METHOD FOR PRODUCTION THEREOF
Document Type and Number:
WIPO Patent Application WO/2004/101842
Kind Code:
A1
Abstract:
A thin film of a compound having a wurtzrite structure which is produced by the use of a reactive sputtering method using a metal material as a target and a nitrogen or oxygen gas as a reactive gas. A wurtzrite thin film having crystal grains being same in the polarization direction can be produced by the optimization of conditions for film forming in the production. A laminate which further has a first wurtzrite crystal layer comprising a wurtzrite crystal structure compound having been formed in advance on the substrate side of a functional substance layer as an under layer. The laminate has a second wurtzrite crystal layer formed on the functional substance layer which is improved in crystallinity and the orientation of crystals.
Inventors:
AKIYAMA MORITO (JP)
UENO NAOHIRO (JP)
TATEYAMA HIROSHI (JP)
KAMOHARA TOSHIHIRO (JP)
UENO NAOHIRO (JP)
TATEYAMA HIROSHI (JP)
KAMOHARA TOSHIHIRO (JP)
Application Number:
PCT/JP2004/006553
Publication Date:
November 25, 2004
Filing Date:
May 14, 2004
Export Citation:
Assignee:
NAT INST OF ADVANCED IND SCIEN (JP)
AKIYAMA MORITO (JP)
UENO NAOHIRO (JP)
TATEYAMA HIROSHI (JP)
KAMOHARA TOSHIHIRO (JP)
AKIYAMA MORITO (JP)
UENO NAOHIRO (JP)
TATEYAMA HIROSHI (JP)
KAMOHARA TOSHIHIRO (JP)
International Classes:
C23C14/06; C30B23/00; H01L41/316; H01L41/257; (IPC1-7): C23C14/06; C23C14/34; C30B29/38; H01L41/187
Foreign References:
| JP2004200843A | 2004-07-15 | |||
| US20020190814A1 | 2002-12-19 |
Other References:
AKIYAMA M. ET AL.: "Statistical approach for optimizimg sputtering conditions of highly oriented aluminium nitride thin films", THIN SOLID FILMS, vol. 315, 1998, pages 62 - 65, XP000668626
AKIYAMA M. ET AL.: "Influence of sputering target material on crystallinity and orientation of AlN thin films", JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, vol. 110, no. 2, 2002, pages 115 - 117, XP002983009
KAMIJO M., KATSUMATA N.: "Sputtering ni yoru yushoku himaku keisei gijutsu ni kansuru, kenkyu", REPORT OF TEH YAMANASHI INDUSTRIAL TECHNOLOGY CENTER, no. 14, 2000, pages 31 - 35, XP002983010
MAEDA Y. ET AL.: "Direct overwriting in InSbTe phase-change optical disk and the mechanism", THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS GIJUTSU KEKYU HOKOKUSHO, vol. 88, no. 388, 1988, pages 47 - 52, XP002983011
KAMOHARA T. ET AL: "AlN nano chukanso ni yoru AlN usumaku no kessho haikosei no kojo (30p-YN-3)", DAI 51 KAI OYO BUTSURIGAKU KANREN RENGO KOENKAI KOEN YOKOSHU, no. 1, 28 March 2004 (2004-03-28), pages 402, XP002983012
AKIYAMA M. ET AL.: "Sekiso denkyoku ni yoru AlN usumaku no haikosei no kojo (30a-S-3)", DAI 50 KAI OYO BUTSURIGAKU KANREN RENGO KOENKAI KOEN YOKOSHU, no. 2, 27 March 2003 (2003-03-27), pages 691, XP002983013
See also references of EP 1672091A4
AKIYAMA M. ET AL.: "Influence of sputering target material on crystallinity and orientation of AlN thin films", JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, vol. 110, no. 2, 2002, pages 115 - 117, XP002983009
KAMIJO M., KATSUMATA N.: "Sputtering ni yoru yushoku himaku keisei gijutsu ni kansuru, kenkyu", REPORT OF TEH YAMANASHI INDUSTRIAL TECHNOLOGY CENTER, no. 14, 2000, pages 31 - 35, XP002983010
MAEDA Y. ET AL.: "Direct overwriting in InSbTe phase-change optical disk and the mechanism", THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS GIJUTSU KEKYU HOKOKUSHO, vol. 88, no. 388, 1988, pages 47 - 52, XP002983011
KAMOHARA T. ET AL: "AlN nano chukanso ni yoru AlN usumaku no kessho haikosei no kojo (30p-YN-3)", DAI 51 KAI OYO BUTSURIGAKU KANREN RENGO KOENKAI KOEN YOKOSHU, no. 1, 28 March 2004 (2004-03-28), pages 402, XP002983012
AKIYAMA M. ET AL.: "Sekiso denkyoku ni yoru AlN usumaku no haikosei no kojo (30a-S-3)", DAI 50 KAI OYO BUTSURIGAKU KANREN RENGO KOENKAI KOEN YOKOSHU, no. 2, 27 March 2003 (2003-03-27), pages 691, XP002983013
See also references of EP 1672091A4
Attorney, Agent or Firm:
Hara, Kenzo (Daiwa Minamimorimachi Building, 2-6,
Tenjinbashi, 2-chome Kita, Kita-k, Osaka-shi Osaka 41, JP)
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